- 您现在的位置：买卖IC网 > Sheet目录510 > SI4455-B1A-FM (Silicon Laboratories Inc)IC EZRADIO FM TRANSCEIVER SI4355
Si4455
3. Functional Description
SDN
GPIO3
Rx Chain
Synthesizer
GPIO2
XIN XOUT
25-32MHz XO
nSEL
RXp
RXn
LNA
PGA
ADC
Rx/Tx
Modem
SDI
SDO
SCLK
nIRQ
Battery
TX
PA
Voltage
Aux ADC
GPIO1
Sensor
VDD
GPIO0
Figure 2. Si4455 Functional Block Diagram
The Si4455 is an easy-to-use, size efficient, low current wireless ISM transceiver that covers the sub-GHz bands.
The wide operating voltage range of 1.8–3.6 V and low current consumption make the Si4455 an ideal solution for
battery powered applications. The Si4455 operates as a time division duplexing (TDD) transceiver where the
device alternately transmits and receives data packets. The device uses a single-conversion mixer to downconvert
the FSK/GFSK or OOK/ASK modulated receive signal to a low IF frequency. Following a programmable gain
amplifier (PGA), the signal is converted to the digital domain by a high performance ?? ADC allowing filtering,
demodulation, slicing, and packet handling to be performed in the built-in digital modem, increasing the receiver ’s
performance and flexibility versus analog based architectures. The demodulated signal is output to the system
MCU through a programmable GPIO or via the standard SPI bus by reading the 64-byte Rx FIFO.
A single high-precision local oscillator (LO) is used for both transmit and receive modes since the transmitter and
receiver do not operate at the same time. The LO signal is generated by an integrated VCO and ?? Fractional-N
PLL synthesizer. The synthesizer is designed to support configurable data rates up to 500 kbps. The Si4455
operates in the frequency bands of 283–350, 425–525, and 850–960 MHz. The transmit FSK data is modulated
directly into the ?? data stream and can be shaped by a Gaussian low-pass filter to reduce unwanted spectral
content.
The Si4455 contains a power amplifier (PA) that supports output powers up to +13 dBm and is designed to support
single coin cell operation with current consumption of 18 mA for +10 dBm output power. The PA is single-ended to
allow for easy antenna matching and low BOM cost. The PA incorporates automatic ramp-up and ramp-down
control to reduce unwanted spectral spreading. Additional system features, such as 64-byte TX/RX FIFOs,
preamble detection, sync word detector, and CRC, reduce overall current consumption and allow for the use of
lower-cost system MCUs. Power-on-reset (POR) and GPIOs further reduce overall system cost and size. The
Si4455 is designed to work with an MCU, crystal, and a few passives to create a very compact and low-cost
system.
Rev 1.1
13
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
SI4462DY-T1-GE3
MOSFET N-CH 200V 1.15A 8-SOIC
SI4463-915-DK
KIT DEV WIRELESS SI4463 915MHZ
SI4465ADY-T1-GE3
MOSFET P-CH 8V 13.7A 8SOIC
SI4466DY-T1-GE3
MOSFET N-CH 20V 9.5A 8-SOIC
SI4470EY-T1-GE3
MOSFET N-CH D-S 60V 8-SOIC
SI4472DY-T1-GE3
MOSFET N-CH D-S 150V 8-SOIC
SI4477DY-T1-GE3
MOSFET P-CH D-S 20V 8-SOIC
SI4483EDY-T1-GE3
MOSFET P-CH D-S 30V 8-SOIC
相关代理商/技术参数
Si4455-B1A-FMR
功能描述:射频收发器 Si4455 EZRadio Transceiver
RoHS:否 制造商:Atmel 频率范围:2322 MHz to 2527 MHz 最大数据速率:2000 Kbps 调制格式:OQPSK 输出功率:4 dBm 类型: 工作电源电压:1.8 V to 3.6 V 最大工作温度:+ 85 C 接口类型:SPI 封装 / 箱体:QFN-32 封装:Tray
SI4455-B1A-GM
制造商:Silicon Laboratories Inc 功能描述:SI4455 EZRADIO TRANSCEIVER - Bulk
SI4455-C2A-GM
功能描述:IC RF TxRx + MCU General ISM < 1GHz 284MHz ~ 960MHz 20-VFQFN Exposed Pad 制造商:silicon labs 系列:- 包装:托盘 零件状态:有效 类型:TxRx + MCU 射频系列/标准:通用 ISM < 1GHz 协议:- 调制:FSK，GFSK，OOK 频率:284MHz ~ 960MHz 数据速率（最大值）:500kbps 功率 - 输出:13dBm（最小值） 灵敏度:-115dBm 存储容量:- 串行接口:SPI GPIO:4 电压 - 电源:1.8 V ~ 3.6 V 电流 - 接收:10.9mA 电流 - 传输:19mA ~ 24mA 工作温度:-40°C ~ 85°C 封装/外壳:20-VFQFN 裸露焊盘 标准包装:490
SI4455-C2A-GMR
功能描述:IC RF TXRX+MCU ISM<1GHZ 20-VFQFN 制造商:silicon labs 系列:* 包装:剪切带（CT） 零件状态:在售 封装/外壳:20-VFQFN 裸露焊盘 标准包装:1
SI4455DY
制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 150-V (D-S) MOSFET
SI4455DY-T1-E3
功能描述:MOSFET 150V 8.9A 5.9W 295mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4455DY-T1-GE3
功能描述:MOSFET 150V 8.9A 5.9W 295mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4456DY-T1-E3
功能描述:MOSFET 40V 33A 7.8W 3.8mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube